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PD - 95553A
AUTOMOTIVE MOSFET
Features
l l l l l l l
HEXFET Power MOSFET
Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
D
IRLR3105PBF IRLU3105PbF (R)
VDSS = 55V RDS(on) = 0.037
G S
ID = 25A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRLR3105 I-Pak IRLU3105
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
25 18 100 57 0.38 16 61 94 See Fig.12a, 12b, 15, 16 3.4 -55 to + 175 300 (1.6mm from case )
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
--- --- ---
Max.
2.65 50 110
Units
C/W
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1
12/7/04
IRLR/U3105PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.056 --- V/C Reference to 25C, ID = 1mA --- 30 37 VGS = 10V, ID = 15A m --- 35 43 VGS = 5.0V, ID = 13A 1.0 --- 3.0 V VDS = VGS, ID = 250A 15 --- --- S VDS = 25V, ID = 15A --- --- 20 VDS = 55V, VGS = 0V A --- --- 250 VDS = 44V, VGS = 0V, TJ = 150C --- --- 200 VGS = 16V nA --- --- -200 VGS = -16V --- --- 20 ID = 15A --- --- 5.6 nC VDS = 44V --- --- 9.0 VGS = 5.0V, See Fig. 6 and 13 --- 8.0 --- VDD = 28V --- 57 --- ID = 15A --- 25 --- RG = 24 --- 37 --- VGS = 5.0V, See Fig. 10 D Between lead, --- 4.5 --- 6mm (0.25in.) nH G from package --- 7.5 --- and center of die contact S --- 710 --- VGS = 0V --- 150 --- VDS = 25V --- 28 --- pF = 1.0MHz, See Fig. 5 --- 890 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- 110 --- VGS = 0V, VDS = 44V, = 1.0MHz --- 210 --- VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 25 --- --- showing the A G integral reverse --- --- 100 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 15A, VGS = 0V --- 52 78 ns TJ = 25C, IF = 15A, VDD = 28V --- 82 120 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 11
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IRLR/U3105PbF
1000
VGS 15V 10V 5.0V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP
100
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
10
VGS 15V 10V 5.0V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP
1
1
2.0V
0.1
2.0V
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
0.1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
30
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
T J = 25C
100.00
25 20
T J = 175C
T J = 175C
10.00
T J = 25C 15 10 5 0
1.00
0.10
0.01 2.0 4.0
VDS = 25V 20s PULSE WIDTH
6.0 8.0
VDS = 25V 20s PULSE WIDTH 0 10 20 30 40
VGS , Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
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IRLR/U3105PbF
1600 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds Crss = C gd Coss = Cds + Cgd
20
SHORTED
ID= 15A VDS= 44V VDS= 28V VDS= 11V
VGS , Gate-to-Source Voltage (V)
1200
16
C, Capacitance (pF)
Ciss
800
12
8
Coss
400
4
FOR TEST CIRCUIT SEE FIGURE 13
Crss
0 1 10 100
0 0 10 20
30
40
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
T J = 175C 10.0
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
10
100sec 1msec
1.0
TJ = 25C
1 Tc = 25C Tj = 175C Single Pulse 1 10
10msec
0.1 0.2 0.4 0.6 0.8 1.0 1.2
VGS = 0V 1.4 1.6 1.8
0.1
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRLR/U3105PbF
30
3.0
I D = 25A
25
2.5
RDS(on) , Drain-to-Source On Resistance
20
2.0
ID , Drain Current (A)
(Normalized)
15
1.5
10
1.0
5
0.5
0 25 50 75 100 125 150 175
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
TC , Case Temperature ( C)
TJ , Junction Temperature
( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
10
(Z thJC )
D = 0.50 1 0.20
Thermal Response
0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 t1/ t
2 J = P DM x Z thJC
+T C 0.1
0.01
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U3105PbF
100
15V
TOP
L
ID 6.1A 11A 15A
RG
20V VGS
D.U.T
IAS tp
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
VDS
DRIVER
80
BOTTOM
60
A
0.01
40
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
20
0 25 50 75 100 125 150 175
Starting Tj, Junction Temperature
( C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS
QGD
VGS(th) Gate threshold Voltage (V)
2.0
VG
1.5
ID = 250A
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
1.0
50K 12V .2F .3F
0.5
D.U.T. VGS
3mA
+ V - DS
0.0 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
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IRLR/U3105PbF
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
0.05 0.10
1
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
0.1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
70 60
EAR , Avalanche Energy (mJ)
T OP Single Pulse BOTT OM 50% Duty Cycle ID = 15A
50 40 30 20 10 0 25 50 75 100 125 150
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRLR/U3105PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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IRLR/U3105PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 12 916A 34
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 12 34
DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S ITE CODE
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IRLR/U3105PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRF U120 919A 56 78
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 56 78
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMBLY S IT E CODE
10
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IRLR/U3105PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes: Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax, starting TJ = 25C, L = 0.55mH Limited by T Jmax ' see Fig 12a, 12b, 15, 16 for typical repetitive RG = 25, IAS = 15A, VGS =10V avalanche performance. ISD 25A, di/dt 290A/s, VDD V(BR)DSS, This value determined from sample failure population. 100% TJ 175C tested to this value in production. Pulse width 300s; duty cycle 2%.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
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